DocumentCode :
1213302
Title :
Schottky-barrier versus homojunction silicon solar cells: a status report
Author :
Townsend, W.G.
Author_Institution :
Royal Military College of Science, Physics Department, Swindon, UK
Volume :
2
Issue :
3
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Abstract :
The present state of silicon Schottky-barrier solar cell (s.b.s.c.) development is reviewed and the relative advantages and disadvantages of this type of cell compared with the competing homojunction cell technology. Recent work on cast silicon substrates is considered, and the conclusion drawn that Schottky-barrier cells are not likely to compete unless a wholly thin-film s.b.s.c. can be developed based on the favourable absorption properties of amorphous silicon. A number of problems requiring solution before s.b.s.c. can compete in terms of reliability and low cost for both thick- and thin-film cells are discussed.
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed:19780012
Filename :
4807560
Link To Document :
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