• DocumentCode
    1213369
  • Title

    Study of interface state generation in thin oxynitride gate dielectrics under hot-electron stressing

  • Author

    Lo, G.Q. ; Ting, W.C. ; Shih, D.K. ; Kwong, D.L.

  • Author_Institution
    Texas Univ., Austin, TX, USA
  • Volume
    25
  • Issue
    20
  • fYear
    1989
  • Firstpage
    1354
  • Lastpage
    1355
  • Abstract
    The hot-electron-induced interface state generation in thin ( approximately 8.6 nm) oxynitride films prepared by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO2 have been studied. Both MOS capacitors and MOSFETs were used as testing devices. For MOSFETs charge-pumping current Icp measurement was performed to monitor the increase Delta Dit of interface state density. It is found that the optimised RTN and RTO processes could produce devices with a significantly improved resistance against the hot electron-induced interface state generation.
  • Keywords
    dielectric thin films; hot carriers; insulated gate field effect transistors; metal-insulator-semiconductor structures; oxidation; semiconductor technology; 8.6 nm; MOS capacitors; MOSFETs; RTN; RTO of RTN oxides; Si xO yN z-Si; charge-pumping current; hot-electron stressing; improved hardness against interface state generation; interface state density; interface state generation; oxynitride gate; rapid thermal reoxidation; rapidly thermal nitrided;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890904
  • Filename
    33991
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1213369