Title :
Study of interface state generation in thin oxynitride gate dielectrics under hot-electron stressing
Author :
Lo, G.Q. ; Ting, W.C. ; Shih, D.K. ; Kwong, D.L.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
The hot-electron-induced interface state generation in thin ( approximately 8.6 nm) oxynitride films prepared by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO2 have been studied. Both MOS capacitors and MOSFETs were used as testing devices. For MOSFETs charge-pumping current Icp measurement was performed to monitor the increase Delta Dit of interface state density. It is found that the optimised RTN and RTO processes could produce devices with a significantly improved resistance against the hot electron-induced interface state generation.
Keywords :
dielectric thin films; hot carriers; insulated gate field effect transistors; metal-insulator-semiconductor structures; oxidation; semiconductor technology; 8.6 nm; MOS capacitors; MOSFETs; RTN; RTO of RTN oxides; Si xO yN z-Si; charge-pumping current; hot-electron stressing; improved hardness against interface state generation; interface state density; interface state generation; oxynitride gate; rapid thermal reoxidation; rapidly thermal nitrided;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890904
