Title :
Simulation of electric field distribution in CMOS single photon avalanche diodes at breakdown voltage
Author :
Jau-Yang Wu ; Sheng-Di Lin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We simulate the electric field distribution in single-photon avalanche diodes (SPADs) fabricated by CMOS 0.25-μm high-voltage technology to explain the observed non-uniform 2-D photo-count mapping. The cause of non-uniform electric field distribution at the breakdown voltage is discussed with the aid of simulation. A method for improving the electric field uniformity is also proposed accordingly.
Keywords :
CMOS integrated circuits; avalanche diodes; semiconductor device breakdown; CMOS; breakdown voltage; electric field distribution simulation; electric field uniformity; high-voltage technology; nonuniform 2-D photo-count mapping; single photon avalanche diodes; size 0.25 mum; CMOS integrated circuits; CMOS technology; Electric fields; Junctions; Optical fiber sensors; Positron emission tomography; Semiconductor process modeling;
Conference_Titel :
Optical MEMS and Nanophotonics (OMN), 2014 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-0-9928-4140-9
DOI :
10.1109/OMN.2014.6924586
