DocumentCode :
1213370
Title :
Doped amorphous silicon and its application in photovoltaic devices
Author :
Gibson, R.A. ; le Comber, P.G. ; Spear, W.E.
Author_Institution :
University of Dundee, Carnegie Laboratory of Physics, Dundee, UK
Volume :
2
Issue :
3
fYear :
1978
fDate :
6/1/1978 12:00:00 AM
Abstract :
The paper deals with the development of the new field of substitutionally doped amorphous semiconductors, and discusses the possible application of amorphous silicon in cheap large-area photovoltaic devices. Preparation and doping from the gas phase are described and the properties of an amorphous junction are discussed.
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed:19780019
Filename :
4807567
Link To Document :
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