DocumentCode
1213436
Title
Electronic and Structural Properties of Oxygen-Doped BN Nanotubes
Author
Silva, Ld.A. ; Guerini, Silvete Coradi ; Lemos, Volia ; Filho, Josué Mendes
Author_Institution
Inst. de Fisica, Sao Paulo Univ.
Volume
5
Issue
5
fYear
2006
Firstpage
517
Lastpage
522
Abstract
The structural and electronic properties of oxygen substitutional doping in a (10,0) BN nanotube were obtained using ab initio calculation based on the density functional theory. For the oxygen replacing a boron atom in the tube (OB), the structure is locally deformed. In the case of nitrogen substitution (ON), however, the tube structure remains practically the same with negligible deformation observed around the oxygen atom. The electronic band structure for OB nanotubes is modified by the appearance of three strongly localized states, two of then as gap states. In the case of ON nanotubes the Fermi level is shifted into the conduction band inducing a metallic character to the doped tube. The analysis of the formation energies shows that the ON substitution is more favorable, particularly in the case of a boron-rich environment
Keywords
Fermi level; III-V semiconductors; ab initio calculations; band structure; boron compounds; conduction bands; density functional theory; localised states; nanotubes; semiconductor doping; wide band gap semiconductors; BN:O; Fermi level; ab initio calculation; conduction band; density functional theory; electronic band structure; electronic property; localized states; oxygen-doped nanotubes; structural property; Boron; Carbon nanotubes; Chemical technology; Density functional theory; Electron tubes; Helium; Insulation; Nanostructures; Nitrogen; Semiconductor device doping; Ab initio calculation; BN nanotube; electronic properties; structural properties;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2006.880495
Filename
1695950
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