Title :
Direct Observation of Silver Atoms on Si
Author :
Mon-Shu Ho ; Chih-Chuan Su ; Tsong, T.T.
Author_Institution :
Dept. of Phys., Nat. Chung-Hsing Univ., Taichung
Abstract :
The dynamics of single silver atoms adsorbed on the Si(111)-7 times 7 surface has been studied between 300 K and 423 K with a variable-temperature scanning tunneling microscope. We discuss the diffusion behavior of one and two silver atoms when they diffuse into a half unit cell of the 7 times 7 reconstructed Si(111) surface. Detailed tracking of the movements of individual silver atoms within a 7 times 7 half unit cell was done at ~80 K. The activation energies and preexponential factors for different diffusion paths were estimated. Finally, possible mechanisms of silver atom diffusion on the Si(111)-7 times 7 surface are proposed based on both our data and those recently published by others
Keywords :
adsorption; diffusion; elemental semiconductors; scanning tunnelling microscopy; silicon; silver; surface reconstruction; 300 to 423 K; 80 K; Ag; Si; activation energy; adsorption; diffusion; preexponential factors; scanning tunnelling microscope; silver atoms; surface reconstruction; Atomic layer deposition; Copper; Gold; Microscopy; Physics; Silicon; Silver; Surface reconstruction; Temperature; Tunneling; Scanning tunneling microscopy (STM); silicon; silver; surface dynamics;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2006.880443