• DocumentCode
    1213453
  • Title

    Direct Observation of Silver Atoms on Si

  • Author

    Mon-Shu Ho ; Chih-Chuan Su ; Tsong, T.T.

  • Author_Institution
    Dept. of Phys., Nat. Chung-Hsing Univ., Taichung
  • Volume
    5
  • Issue
    5
  • fYear
    2006
  • Firstpage
    530
  • Lastpage
    534
  • Abstract
    The dynamics of single silver atoms adsorbed on the Si(111)-7 times 7 surface has been studied between 300 K and 423 K with a variable-temperature scanning tunneling microscope. We discuss the diffusion behavior of one and two silver atoms when they diffuse into a half unit cell of the 7 times 7 reconstructed Si(111) surface. Detailed tracking of the movements of individual silver atoms within a 7 times 7 half unit cell was done at ~80 K. The activation energies and preexponential factors for different diffusion paths were estimated. Finally, possible mechanisms of silver atom diffusion on the Si(111)-7 times 7 surface are proposed based on both our data and those recently published by others
  • Keywords
    adsorption; diffusion; elemental semiconductors; scanning tunnelling microscopy; silicon; silver; surface reconstruction; 300 to 423 K; 80 K; Ag; Si; activation energy; adsorption; diffusion; preexponential factors; scanning tunnelling microscope; silver atoms; surface reconstruction; Atomic layer deposition; Copper; Gold; Microscopy; Physics; Silicon; Silver; Surface reconstruction; Temperature; Tunneling; Scanning tunneling microscopy (STM); silicon; silver; surface dynamics;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2006.880443
  • Filename
    1695952