DocumentCode
1213453
Title
Direct Observation of Silver Atoms on Si
Author
Mon-Shu Ho ; Chih-Chuan Su ; Tsong, T.T.
Author_Institution
Dept. of Phys., Nat. Chung-Hsing Univ., Taichung
Volume
5
Issue
5
fYear
2006
Firstpage
530
Lastpage
534
Abstract
The dynamics of single silver atoms adsorbed on the Si(111)-7 times 7 surface has been studied between 300 K and 423 K with a variable-temperature scanning tunneling microscope. We discuss the diffusion behavior of one and two silver atoms when they diffuse into a half unit cell of the 7 times 7 reconstructed Si(111) surface. Detailed tracking of the movements of individual silver atoms within a 7 times 7 half unit cell was done at ~80 K. The activation energies and preexponential factors for different diffusion paths were estimated. Finally, possible mechanisms of silver atom diffusion on the Si(111)-7 times 7 surface are proposed based on both our data and those recently published by others
Keywords
adsorption; diffusion; elemental semiconductors; scanning tunnelling microscopy; silicon; silver; surface reconstruction; 300 to 423 K; 80 K; Ag; Si; activation energy; adsorption; diffusion; preexponential factors; scanning tunnelling microscope; silver atoms; surface reconstruction; Atomic layer deposition; Copper; Gold; Microscopy; Physics; Silicon; Silver; Surface reconstruction; Temperature; Tunneling; Scanning tunneling microscopy (STM); silicon; silver; surface dynamics;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2006.880443
Filename
1695952
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