• DocumentCode
    1213513
  • Title

    Experimental comparison of lifetime-measurement techniques for m.o.s. capacitors

  • Author

    Morandi, C. ; Spadini, G.

  • Author_Institution
    Universit¿¿ di Bologna, Facolt¿¿ di Ingegneria, Istituto di Elettronica, Bologna, Italy
  • Volume
    2
  • Issue
    3
  • fYear
    1978
  • fDate
    5/1/1978 12:00:00 AM
  • Firstpage
    69
  • Lastpage
    74
  • Abstract
    Three techniques commonly used to determine lifetime in m.o.s. capacitors are compared experimentally and very good agreement is found. It is shown that, in favourable circumstances, the combined use of the three may help to localise the active defect in the forbidden gap. Finally, some experimental results obtained with two of the techniques over a wide temperature range are discussed.
  • Keywords
    carrier lifetime; metal-insulator-semiconductor structures; minority carriers; MOS capacitors; active defect; lifetime measurement techniques; minority carriers;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1978.0034
  • Filename
    4807583