DocumentCode
1213513
Title
Experimental comparison of lifetime-measurement techniques for m.o.s. capacitors
Author
Morandi, C. ; Spadini, G.
Author_Institution
Universit¿¿ di Bologna, Facolt¿¿ di Ingegneria, Istituto di Elettronica, Bologna, Italy
Volume
2
Issue
3
fYear
1978
fDate
5/1/1978 12:00:00 AM
Firstpage
69
Lastpage
74
Abstract
Three techniques commonly used to determine lifetime in m.o.s. capacitors are compared experimentally and very good agreement is found. It is shown that, in favourable circumstances, the combined use of the three may help to localise the active defect in the forbidden gap. Finally, some experimental results obtained with two of the techniques over a wide temperature range are discussed.
Keywords
carrier lifetime; metal-insulator-semiconductor structures; minority carriers; MOS capacitors; active defect; lifetime measurement techniques; minority carriers;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1978.0034
Filename
4807583
Link To Document