Title :
Oxide wearout phenomena of ultrathin SiO2 film during high-field stress
Author :
Fukuda, H. ; Yasuda, M. ; Iwabuchi, T.
Author_Institution :
Oki Electric Ind. Co. Ltd., Tokyo, Japan
fDate :
7/30/1992 12:00:00 AM
Abstract :
The behaviour of 3.5 nm-thick thermal SiO2 films under high-field (>14 MV/cm) electrical stress is measured. During the stress, time-dependent oxide wearout, which arises via three step processes, has been observed for small-area MOS tunnel diodes. The results showed that stress-induced anomalous conduction, in which the barrier height drops to 0.7 eV, arises in the final degradation process. This finding indicates that a new current path arises via oxide trap sites spreading into the oxide, triggering the oxide breakdown.
Keywords :
dielectric thin films; electric breakdown of solids; electron traps; high field effects; hole traps; metal-insulator-semiconductor structures; silicon compounds; barrier height; degradation process; electrical stress; high-field stress; oxide breakdown; oxide trap sites; small-area MOS tunnel diodes; stress-induced anomalous conduction; time-dependent oxide wearout; ultrathin SiO 2 film;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920963
