Title :
Novel light-modulated m.o.s. transistor
Author :
Flynn, B.W. ; Mavor, J. ; Owen, A.E.
Author_Institution :
University of Edinburgh, School of Engineering Science, Edinburgh, UK
fDate :
5/1/1978 12:00:00 AM
Abstract :
A light-modulated m.o.s. transistor is proposed, the opitcal sensitivity being based on the phenomenon of photosensitised charge injection from a photoconductor into an insulator. Details are given of the design, fabrication and testing of a simple prototype structure that demonstrates the feasibility of the device.
Keywords :
insulated gate field effect transistors; phototransistors; MOST; light modulated MOS transistor; photosensitised charge injection;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0038
