Title :
Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics
Author :
Choi, Rino ; Onishi, Katsunori ; Kang, Chang Seok ; Cho, Hag-Ju ; Kim, Y.H. ; Krishnan, Siddharth ; Akbar, M.S. ; Lee, Jack C.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
fDate :
3/1/2003 12:00:00 AM
Abstract :
The effects of high-temperature (600/spl deg/C) anneal in a dilute deuterium (N/sub 2/ : D/sub 2/= 96 : 4) atmosphere was first investigated and evaluated in comparison to high-temperature forming gas (N/sub 2/ : H/sub 2/= 96 : 4) anneal (600/spl deg/C) and nonanneal samples. The high-temperature deuterium anneal was as effective as the forming gas anneal in improving MOSCAP and MOSFET characteristics such as the C-V curve, drain current, subthreshold swing, and carrier mobility. These can be attributed to the improved interface quality by D/sub 2/ atoms. However, unlike the forming gas anneal, the deuterium anneal provided the hafnium oxide (HfO/sub 2/) gate dielectric MOSFET with better reliability characteristics such as threshold voltage (V/sub T/) stability under high voltage stress.
Keywords :
MOSFET; annealing; carrier mobility; deuterium; dielectric thin films; interface structure; semiconductor device reliability; semiconductor-insulator boundaries; stability; 600 C; C-V curve; HfO/sub 2/; HfO/sub 2/ gate dielectrics; MOSCAP characteristics; MOSFET characteristics; carrier mobility; deuterium anneal; drain current; high voltage stress; high-temperature D/sub 2/ anneal; interface quality; reliability characteristics; subthreshold swing; threshold voltage stability; Annealing; Atmosphere; Capacitance-voltage characteristics; Deuterium; Dielectrics; Hafnium oxide; MOSFETs; Stability; Stress; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.809531
