Title :
Two-dimensional analysis of breakdown in epitaxial planar junctions
Author :
Jindal, S. ; Bhattacharyya, A.B. ; Warrior, J.
Author_Institution :
Indian Institute of Technology, Electronics, Electrical Engineering Department, New Delhi, India
fDate :
7/1/1978 12:00:00 AM
Abstract :
A two-dimensional analysis of planar p-n-n+ junctions has been carried out using a successive-point overrelaxation method. This analysis gives better insight into the location of breakdown and the dependence of breakdown voltage on physical parameters of the junction, than obtained by a one-dimensional analysis. During the study an empirical relation has been found between breakdown voltage and the corresponding depletion-layer width. The computer program developed in this work enables calculation of generation current also. The information obtained helps in better device design.
Keywords :
electronic engineering computing; p-n homojunctions; semiconductor device models; semiconductor epitaxial layers; breakdown location; breakdown voltage; computer aided analysis; depletion layer width effect; epitaxial planar junctions; generation current; physical parameters effect; planar p-n-n+ junctions; point overrelaxation method; punch through condition; successive electric breakdown; two dimensional analysis;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0042
