DocumentCode :
1213612
Title :
D.C. characteristics of si3n4 passivated m-n-p+ punch-through diodes
Author :
Stoev, I. ; Freyer, J.
Author_Institution :
Technische Univeristÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Volume :
2
Issue :
4
fYear :
1978
fDate :
7/1/1978 12:00:00 AM
Firstpage :
121
Lastpage :
122
Abstract :
The paper describes the technology of a passivating Si3N4 layer on the mesa surface of punchthrough diodes. The influence of the free mesa surface on the d.c. performance is given for different gases. Stable I/V characteristics of punch-through diodes can be obtained by annealing in a dry N2 atmosphere before Si3N4 passivation.
Keywords :
annealing; passivation; semiconductor diodes; silicon compounds; DC characteristics; Si3N4 passivated m-n-p+ punch through diodes; device stability; dry N2 atmosphere annealing;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed:19780044
Filename :
4807594
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1213612
بازگشت