Title :
Infrared high spatial-resolution determination of doping levels in p-n junctions
Author :
White, J.C. ; Smith, J.G.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
fDate :
9/1/1978 12:00:00 AM
Abstract :
A nondestructive infrared emission-measurement technique, which allows point-by-point determination of the effective doping level within the depletion layer of a reverse-biased p-n junction, is described. The method is an alternative to normal capacitance-voltage techniques which give a value averaged over the entire junction area. With this technique a spatial resolution of about 15 ¿¿m is obtainable and a further advantage is that it is unaffected by high reverse currents.
Keywords :
doping profiles; emissivity; p-n junctions; IR high spatial resolution; capacitance voltage techniques; depletion layer; doping levels; high reverse currents; nondestructive IR emission measurement; p-n junctions; semiconductor;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0051
