• DocumentCode
    1213698
  • Title

    Role of front contact work function on amorphous silicon/crystalline silicon heterojunction solar cell performance

  • Author

    Centurioni, Emanuele ; Iencinella, Daniele

  • Author_Institution
    CNR-IMM Sezione di Bologna, Italy
  • Volume
    24
  • Issue
    3
  • fYear
    2003
  • fDate
    3/1/2003 12:00:00 AM
  • Firstpage
    177
  • Lastpage
    179
  • Abstract
    We investigated with numerical simulations the effects that a transparent conductive oxide front contact (TCO) can have on amorphous silicon/crystalline silicon heterojunction solar cells. We found that, due to the extremely thin emitter layer used in this kind of device, the built-in potential available cannot be merely defined by the difference between the work function of the emitter and the base, but it depends on TCO work function as well. As a consequence, because of the correlation between built-in potential and open circuit voltage, the TCO work function strongly affects the solar cell performance. Simulation results show that a higher work function leads to the best device efficiency.
  • Keywords
    amorphous semiconductors; elemental semiconductors; interface states; semiconductor device models; semiconductor heterojunctions; silicon; solar cells; surface recombination; work function; ITO; InSnO; Si; amorphous Si/crystalline Si heterojunction solar cell performance; built-in potential; device efficiency; extremely thin emitter layer; front contact work function; numerical simulations; open circuit voltage; solar cell performance; transparent conductive oxide front contact; Amorphous silicon; Circuit simulation; Crystallization; Heterojunctions; Indium tin oxide; Optical films; Photovoltaic cells; Poisson equations; Solar power generation; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.811405
  • Filename
    1202519