DocumentCode :
121370
Title :
Nanocrystalline silicon based solar cell technology for large volume manufacturing
Author :
Anhong Hu ; Minghao Qu ; Jinyan Zhang ; Xinghong Zhou ; Shaofei Yang ; Xiao, Jun ; Hu, Chuanmin ; Changtao Peng ; Xixiang Xu
Author_Institution :
Hanergy Solar Group, Shuangliu, China
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
3534
Lastpage :
3538
Abstract :
In this paper, we report the progress of nanocrystalline silicon (nc-Si) based a-Si/nc-Si double-junction solar cell technology development at Hanergy Solar. We conduct the experiments mainly for optimization and development on 1) high quality intrinsic amorphous silicon (a-Si) films used for top cells, 2) p-layers and buffer layers, and 3) intrinsic nc-Si film used for bottom cells. We have achieved initial total area efficiency of 12.9%, and stable total area efficiency of 11.1% for a-Si/nc-Si double-junction modules (0.79m2). Experimental results including study of individual component cell optimization, crystal volume fraction optimization, and development of superior doped layers are presented.
Keywords :
amorphous semiconductors; buffer layers; elemental semiconductors; integrated circuit manufacture; nanostructured materials; semiconductor junctions; semiconductor thin films; silicon; solar cells; Hanergy Solar; Si; buffer layers; component cell optimization; crystal volume fraction optimization; double-junction modules; double-junction solar cell technology development; efficiency 11.1 percent; efficiency 12.9 percent; large volume manufacturing; nanocrystalline silicon based solar cell technology; p-layers; superior doped layer development; Control systems; Europe; Indexes; Manufacturing; X-ray scattering; amorphous silicon; large volume manufacturing; light induced degradation; nanocrystalline silicon; tandem cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6924871
Filename :
6924871
Link To Document :
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