Title :
The carrier-domain magnetometer: a novel silicon magnetic field sensor
Author :
Manley, M.H. ; Bloodworth, G.G.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
fDate :
11/1/1978 12:00:00 AM
Abstract :
The operating principles of the carrier-domain magnetometer are described. This novel semiconductor magnetic-field sensor produces output current pulses with a frequency proportional to the magnitude of the magnetic-flux density acting normally to the surface of the device. Experimental results are presented to demonstrate the sensitivity of the magnetometer. Anomalous features of device operation are explained; in particular, the existence of a threshold magnetic-flux density below which the device will not respond.
Keywords :
bipolar transistors; magnetic field measurement; magnetometers; Si magnetic field sensor; bipolar transistor; carrier domain magnetometer; magnetic flux density; n-p-n transistor; p-n-p transistor;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1978.0054
