Title :
What are the limiting parameters of deep-submicron MOSFETs for high frequency applications?
Author :
Dambrine, G. ; Raynaud, C. ; Lederer, D. ; Dehan, M. ; Rozeaux, O. ; Vanmackelberg, M. ; Danneville, F. ; Lepilliet, S. ; Raskin, J.P.
Author_Institution :
Inst. d´´Electronique et de Microelectronique du Nord, Villeneuve d´´Ascq, France
fDate :
3/1/2003 12:00:00 AM
Abstract :
Parameters limiting the improvement of high frequency characteristics for deep submicron MOSFETs with the downscaling process of the channel gate length are analyzed experimentally and analytically. It is demonstrated that for MOSFETs with optimized source, drain and gate access, the degradation of the maximum oscillation frequency is mainly related to the increase of the parasitic feedback gate-to-drain capacitance and output conductance with the physical channel length reduction. Optimization of these internal parameters is needed to further improve the high frequency performance of ultra deep submicron MOSFETs.
Keywords :
MOSFET; capacitance; electric admittance; equivalent circuits; microwave field effect transistors; RF CMOS; channel gate length; channel length reduction; deep-submicron MOSFETs; downscaling process; equivalent circuit; high frequency applications; internal parameter optimization; limiting parameters; maximum oscillation frequency degradation; microwave performance; optimized drain; optimized gate access; optimized source; output conductance; parasitic feedback gate-to-drain capacitance; CMOS technology; Degradation; Equivalent circuits; Frequency; HEMTs; Integrated circuit technology; Length measurement; MODFETs; MOSFETs; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.809525
