Title :
A 0.8-dB insertion-loss, 17.4-dBm power-handling, 5-GHz transmit/receive switch with DETs in a 0.18-μm CMOS process
Author :
Ohnakado, T. ; Yamakawa, S. ; Murakami, T. ; Furukawa, A. ; Nishikawa, K. ; Taniguchi, E. ; Ueda, H. ; Ono, M. ; Tomisawa, J. ; Yoneda, Y. ; Hashizume, Y. ; Sugahara, K. ; Suematsu, N. ; Oomori, T.
Author_Institution :
Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
3/1/2003 12:00:00 AM
Abstract :
An optimized single-pole double-throw (SPDT) transmit/receive (T/R) switch has been fabricated using depletion-layer-extended transistors (DETs) in a 0.18 μm CMOS process. The switch features the highest performance to date of any switch using a CMOS process, of a 0.8 dB insertion-loss, 23 dB isolation and 17.4 dBm power-handling capability at 5 GHz. The low insertion-loss has been achieved with the effects of junction capacitance decrease and substrate resistance increase in the DET, the adoption of low-loss shielded-pads, and several layout optimizations. The high power-handling capability is owing to the combined effect of the adoption of the source/drain dc biasing scheme and the high substrate resistance in the DET.
Keywords :
CMOS integrated circuits; MOSFET; circuit optimisation; field effect MMIC; field effect transistor switches; integrated circuit layout; microwave switches; 0.18 micron; 0.8 dB; 5 GHz; CMOS process; DETs; depletion-layer-extended transistors; insertion-loss; isolation; junction capacitance decrease; layout optimizations; low-loss shielded-pads; optimized single-pole double-throw transmit/receive switch; power-handling capability; source/drain dc biasing scheme; substrate resistance increase; transmit/receive switch; CMOS process; Capacitance; Fabrication; MOSFETs; Microwave devices; Microwave integrated circuits; Radio frequency; Research and development; Switches; Switching circuits;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.811404
