DocumentCode :
1213760
Title :
Dual-gate charge sensing in charge-coupled devices
Author :
Hobson, G.S. ; Longstone, R. ; Tozer, R.C.
Author_Institution :
University of Sheffield, Department of Electronic &Electrical Engineering, Sheffield, UK
Volume :
2
Issue :
6
fYear :
1978
fDate :
11/1/1978 12:00:00 AM
Firstpage :
207
Lastpage :
214
Abstract :
A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.
Keywords :
charge-coupled devices; dual gate charge sensing; linear sensing; surface potential equilibrium; tapped charge coupled devices;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed:19780058
Filename :
4807610
Link To Document :
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