• DocumentCode
    1213760
  • Title

    Dual-gate charge sensing in charge-coupled devices

  • Author

    Hobson, G.S. ; Longstone, R. ; Tozer, R.C.

  • Author_Institution
    University of Sheffield, Department of Electronic &Electrical Engineering, Sheffield, UK
  • Volume
    2
  • Issue
    6
  • fYear
    1978
  • fDate
    11/1/1978 12:00:00 AM
  • Firstpage
    207
  • Lastpage
    214
  • Abstract
    A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.
  • Keywords
    charge-coupled devices; dual gate charge sensing; linear sensing; surface potential equilibrium; tapped charge coupled devices;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed:19780058
  • Filename
    4807610