DocumentCode
1213760
Title
Dual-gate charge sensing in charge-coupled devices
Author
Hobson, G.S. ; Longstone, R. ; Tozer, R.C.
Author_Institution
University of Sheffield, Department of Electronic &Electrical Engineering, Sheffield, UK
Volume
2
Issue
6
fYear
1978
fDate
11/1/1978 12:00:00 AM
Firstpage
207
Lastpage
214
Abstract
A novel technique is described for linear sensing of charge in tapped charge-coupled devices. It uses two gates. One is biased by a voltage source and one is floating, but both are coupled by surface-potential equilibrium. It is shown, experimentally and theoretically, that this technique has better linearity and dynamic range than floating-gate sensing. It has the same ease of peripheral circuit implementation as a floating-gate structure.
Keywords
charge-coupled devices; dual gate charge sensing; linear sensing; surface potential equilibrium; tapped charge coupled devices;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed:19780058
Filename
4807610
Link To Document