Deep proton-isolated lasers and proton range data for InP and GaSb

Author

Henshall, G.D. ; Thompson, G.H.B. ; Whiteaway, J.E.A. ; Selway, P.R. ; Broomfield, M.

Author_Institution

Standard Telecommunication Laboratories Ltd., Harlow, UK

Volume

3

Issue

1

fYear

1979

fDate

1/1/1979 12:00:00 AM

Firstpage

1

Lastpage

5

Abstract

Deep proton-isolated (GaAl)As/GaAs lasers have been fabricated in structures where the active layer was 40 ¿¿m from the surface. Proton-isolation masks have been made enabling high proton energies, up to 2.5 MeV, to be used. By chemically delineating the proton-bombarded regions studies have been made of proton penetration in (GaAl) As/GaAs laser structures. This work was extended to include a study of proton penetration in other III-V compound semiconductors and results show that the energy-range data for GaAs, InP and GaSb is very similar. The characteristics of deep proton-isolated (GaAl) As/GaAs lasers have been investigated and results are given which show that improvements to the external quantum efficiency, peak power operation and reliability can be realised by using this technique of laser fabrication.

Keywords

III-V semiconductors; energy loss of particles; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; (GaAl)As/GaAs lasers; 2.5 MeV proton energies; 40 micron deep active layer; GaAs; GaSb; InP; deep proton isolated lasers; external quantum efficiency; laser characteristics; laser fabrication; peak power operation; proton range data; reliability; semiconductor junction lasers;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Journal on

Publisher

iet

ISSN

0308-6968

Type

jour

DOI

10.1049/ij-ssed.1979.0001

Filename

4807614