DocumentCode
1213804
Title
Interface state charge in thin-oxide m.i.s.t. devices
Author
Nassibian, A.G. ; Calligaro, R.B. ; Simmons, J.G.
Author_Institution
University of Western Australia, Department of Electrical & Electronic Engineering, Perth, Australia
Volume
3
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
6
Abstract
A method for determining the surface-state charge density Qssof metal-thin tunnel oxide-silicon (m.i.s.) structures is presented, using the 3-terminal m.i.s. thyristor (m.i.s.t.) devices. Values of interface state charges are obtained from I/Vcharacteristics of the device. Measurements were carried out and it was found that a Qss= 1.6 ¿¿ 10¿¿7Ccm¿¿2, equivalent to an electronic charge of 1012cm¿¿2, is of the right order for thin oxides grown at low temperatures of 800¿¿C, and is in agreement with other published results.
Keywords
interface electron states; metal-insulator-semiconductor devices; semiconductor device models; thyristors; tunnelling; I/V characteristics; interface state charges; metal thin tunnel oxide Si structures; oxides <4 Angstrom thick; surface state charge density 1.6x10-7C cm-2; three terminal MIS thyristor;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1979.0002
Filename
4807615
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