RF CMOS on high-resistivity substrates for system-on-chip applications

Author

Benaissa, Kamel ; Yang, Jau-Yuann ; Crenshaw, Darius ; Williams, Byron ; Sridhar, Seetharaman ; Ai, Johnny ; Boselli, Gianluca ; Zhao, Song ; Tang, Shaoping ; Ashburn, Stanton ; Madhani, Praful ; Blythe, Timothy ; Mahalingam, Nandu ; Shichijo, Hisashi

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

50

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

567

Lastpage

576

Abstract

The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on-chip (SoC) applications is discussed. The comparison includes the transistor, transmission line, inductor, capacitor and varactor, as well as the noise isolation. We also discuss the integration issues including latch-up and well-well isolation in a 0.35-μm Cu metal pitch, 0.1-μm-gate-length RF CMOS technology.

Keywords

CMOS integrated circuits; copper; equivalent circuits; integrated circuit noise; integrated circuit technology; isolation technology; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; silicon; substrates; system-on-chip; 0.1 micron; 0.35 micron; Cu; Cu metal CMOS technology; RF CMOS; Si; SoC applications; capacitor; digital CMOS technology; high-performance RF passive components; high-resistivity substrates; inductor; integration issues; latch-up; noise isolation; system-on-chip applications; transistor; transmission line; varactor; well-well isolation; CMOS technology; Circuit noise; Conductivity; Coupling circuits; Cutoff frequency; Dielectric substrates; Isolation technology; Radio frequency; Silicon; System-on-a-chip;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.810470

Filename

1202552