DocumentCode
1213814
Title
Equilibrium and non-equilibrium response of an m.o.s. system containing interface traps to a linear voltage ramp
Author
Board, K. ; Allman, P.G.C. ; Simmons, J.G.
Volume
3
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
11
Lastpage
16
Abstract
In the first part of this paper the effects of introducing specific interface trap configurations into the ideal m.o.s. system are considered while maintaining the condition for equilibrium. The theory is then used to fit an experimental curve and it is found that only three rectangular distributions placed appropriately in the energy gap are sufficient to give close agreement. In the second part the capacitance/voltage relationships are considered of an m.o.s. system biased with a linear voltage ramp of such rate as to generate the quasiequilibrium curve for part of the voltage range, and a nonequilibrium portion for the remainder. A theory is developed for the transition point and the subsequent nonequilibrium behaviour, based on the assumption that interface traps that interact only with the conduction band are the dominating influence. Experimental data are presented which provides reasonable agreement with the theory.
Keywords
capacitance; electron traps; interface electron states; metal-insulator-semiconductor structures; MOS structures; MOS system containing interface traps; capacitance/voltage characteristics; electron traps; equilibrium response; linear voltage ramp; nonequilibrium response;
fLanguage
English
Journal_Title
Solid-State and Electron Devices, IEE Journal on
Publisher
iet
ISSN
0308-6968
Type
jour
DOI
10.1049/ij-ssed.1979.0003
Filename
4807616
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