• DocumentCode
    1213814
  • Title

    Equilibrium and non-equilibrium response of an m.o.s. system containing interface traps to a linear voltage ramp

  • Author

    Board, K. ; Allman, P.G.C. ; Simmons, J.G.

  • Volume
    3
  • Issue
    1
  • fYear
    1979
  • fDate
    1/1/1979 12:00:00 AM
  • Firstpage
    11
  • Lastpage
    16
  • Abstract
    In the first part of this paper the effects of introducing specific interface trap configurations into the ideal m.o.s. system are considered while maintaining the condition for equilibrium. The theory is then used to fit an experimental curve and it is found that only three rectangular distributions placed appropriately in the energy gap are sufficient to give close agreement. In the second part the capacitance/voltage relationships are considered of an m.o.s. system biased with a linear voltage ramp of such rate as to generate the quasiequilibrium curve for part of the voltage range, and a nonequilibrium portion for the remainder. A theory is developed for the transition point and the subsequent nonequilibrium behaviour, based on the assumption that interface traps that interact only with the conduction band are the dominating influence. Experimental data are presented which provides reasonable agreement with the theory.
  • Keywords
    capacitance; electron traps; interface electron states; metal-insulator-semiconductor structures; MOS structures; MOS system containing interface traps; capacitance/voltage characteristics; electron traps; equilibrium response; linear voltage ramp; nonequilibrium response;
  • fLanguage
    English
  • Journal_Title
    Solid-State and Electron Devices, IEE Journal on
  • Publisher
    iet
  • ISSN
    0308-6968
  • Type

    jour

  • DOI
    10.1049/ij-ssed.1979.0003
  • Filename
    4807616