Influence of device engineering on the analog and RF performances of SOI MOSFETs

Author

Kilchytska, Valeriya ; Nève, Amaury ; Vancaillie, Laurent ; Levacq, David ; Adriaensen, Stéphane ; Van Meer, Hans ; De Meyer, Kristin ; Raynaud, Christine ; Dehan, Morin ; Raskin, Jean-Pierre ; Flandre, Denis

Author_Institution

Microelectron. Labs., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium

Volume

50

Issue

3

fYear

2003

fDate

3/1/2003 12:00:00 AM

Firstpage

577

Lastpage

588

Abstract

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET´s with gate lengths down to 0.08 μm. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).

Keywords

MOS analogue integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; ion implantation; silicon-on-insulator; 0.08 micron; Early voltage; HALO implantation; RF performances; SOI MOSFETs; Si; analog MOS performance; analog performance; analog/UHF circuits; bulk MOSFETs; device engineering; figures of merits; film thickness; fully depleted SOI; gate-body contacted DTMOS; nonstandard channel engineering; partially depleted SOI; process options; substrate doping; transconductance-over-drain current ratio; Capacitance; MOSFETs; Microwave devices; Performance gain; Radio frequency; Semiconductor device doping; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.810471

Filename

1202554