DocumentCode :
1213834
Title :
Mechanical and electrical characterization of β-Ga2O3 nanostructures for sensing applications
Author :
Yu, Min-Feng ; Atashbar, Massood Z. ; Chen, Xiaolong
Author_Institution :
Dept. of Mech. & Ind. Eng., Univ. of Illinois, Urbana, IL, USA
Volume :
5
Issue :
1
fYear :
2005
Firstpage :
20
Lastpage :
25
Abstract :
Single crystalline β-Ga2O3 nanowire and nanoribbon materials were synthesized, and electrical and mechanical properties were studied for sensing applications. The structural analysis showed that the Ga2O3 nanomaterials were stoichiometric and had the same crystal lattice structure as the β phase Ga2O3 crystal. The mechanical study on individual Ga2O3 nanowires and nanoribbons showed that they had a bending modulus of around 300 GPa, are flexible (in bending and twisting), and are easy to be cleaved along their crystal lattice. The current-voltage electrical characterization through the thickness of nanoribbon and along the length of nanowire confirmed their semiconducting characteristic. A two-terminal device fabricated with an individual Ga2O3 nanowire showed good sensing response to ethanol gas at low-operating temperature, which revealed the potential of using such nanostructures for effective sensing applications.
Keywords :
bending strength; crystal structure; electrochemical sensors; gallium compounds; gas sensors; nanowires; semiconductor materials; Ga2O3; crystal lattice structure; electrical characterization; ethanol gas sensing; mechanical characterization; nanoribbon materials; semiconducting characteristic; sensing applications; single crystalline nanowire; structural analysis; two-terminal device; Crystalline materials; Crystallization; Ethanol; Lattices; Mechanical factors; Nanomaterials; Nanoscale devices; Nanostructured materials; Semiconductivity; Temperature sensors;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2004.838669
Filename :
1386217
Link To Document :
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