DocumentCode
1213873
Title
Fabrication and gain measurements for buried facet optical amplifier
Author
Lin, M.S. ; Piccirilli, A.B. ; Twu, Y. ; Dutta, N.K.
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
25
Issue
20
fYear
1989
Firstpage
1378
Lastpage
1380
Abstract
Reports the fabrication and gain measurements of buried facet optical amplifiers. Chip gain of 25 dB, gain ripple of <1 dB and gain difference of <1 dB for TE and TM-polarised light are observed. The gain is found to decrease rapidly with increasing temperature. This behaviour is explained using a model calculation of the radiative and nonradiative recombination rates in the active region of the amplifier.
Keywords
gain measurement; optical communication equipment; semiconductor junction lasers; TE polarised light; TM-polarised light; active region; buried facet optical amplifier; chip gain; gain difference; gain measurements; gain ripple; model calculation; nonradiative recombination;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890922
Filename
34008
Link To Document