Title :
Identification of trap states for two-step two-photon-absorption processes in InAs quantum structures for intermediate-band solar cells
Author :
Tex, David M. ; Kamiya, Itaru ; Kanemitsu, Yoshihiko
Author_Institution :
Inst. for Chem. Res., Kyoto Univ., Uji, Japan
Abstract :
Intermediate bands bear trap and recombination centers for carriers generated in other energy levels. Assessment of recombination centers is important for achieving efficient carrier generation. We measure the photocurrent (PC) originating from InAs quantum structures embedded in an undoped (Al)GaAs matrix due to excitation with multiple tunable beams. With an infrared light excitation the influence of trapping or recombination on the quantum dot PC generation efficiency via two-step two-photon-absorption processes is evaluated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconductivity; photoexcitation; quantum dots; solar cells; AlGaAs; InAs; PC; carrier generation; energy levels; infrared light excitation; intermediate band bear trap; intermediate-band solar cells; multiple tunable beams; photocurrent; quantum dots; quantum structures; recombination center assessment; trap state identification; two-step two-photon-absorption processes; Charge carrier processes; Gallium arsenide; Laser beams; Measurement by laser beam; Photovoltaic cells; Quantum dots; Radiative recombination; III–V semiconductor materials; laser excitation; photovoltaic cells; quantum dots; spectroscopy;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924889
