• DocumentCode
    121389
  • Title

    Urbach tail in intermediate band InAs/GaAs quantum dot solar cells

  • Author

    Tian Li ; Dagenais, Mario

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    3622
  • Lastpage
    3625
  • Abstract
    We demonstrate that the self-assembled InAs/GaAs quantum dots create perturbation to the GaAs lattice periodicity and form an extended Urbach tail, which provides additional energy states within the bandgap. From an external quantum efficiency measurement, we determine quantitatively the tailing distribution density of states near the band edge. We find that the Urbach tail is responsible for 45% of the total enhanced photocurrent below the gap and leads to a degradation of the open-circuit voltage and an increase of the short-circuit current.
  • Keywords
    III-V semiconductors; energy gap; gallium arsenide; indium compounds; photoconductivity; semiconductor quantum dots; short-circuit currents; solar cells; Urbach tail; bandgap; intermediate band quantum dot solar cells; lattice periodicity; open-circuit voltage; photocurrent; quantum efficiency measurement; self-assembled quantum dots; short-circuit current; Absorption; Energy states; Gallium arsenide; Photonic band gap; Photonics; Photovoltaic cells; Quantum dots; below bandgap absorption; extended Urbach tail; intermediate band; quantum dots; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6924890
  • Filename
    6924890