DocumentCode :
121389
Title :
Urbach tail in intermediate band InAs/GaAs quantum dot solar cells
Author :
Tian Li ; Dagenais, Mario
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
3622
Lastpage :
3625
Abstract :
We demonstrate that the self-assembled InAs/GaAs quantum dots create perturbation to the GaAs lattice periodicity and form an extended Urbach tail, which provides additional energy states within the bandgap. From an external quantum efficiency measurement, we determine quantitatively the tailing distribution density of states near the band edge. We find that the Urbach tail is responsible for 45% of the total enhanced photocurrent below the gap and leads to a degradation of the open-circuit voltage and an increase of the short-circuit current.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; indium compounds; photoconductivity; semiconductor quantum dots; short-circuit currents; solar cells; Urbach tail; bandgap; intermediate band quantum dot solar cells; lattice periodicity; open-circuit voltage; photocurrent; quantum efficiency measurement; self-assembled quantum dots; short-circuit current; Absorption; Energy states; Gallium arsenide; Photonic band gap; Photonics; Photovoltaic cells; Quantum dots; below bandgap absorption; extended Urbach tail; intermediate band; quantum dots; solar cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6924890
Filename :
6924890
Link To Document :
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