Title :
Some design aspects of m.o.s.l.s.i. operational amplifiers
Author :
Hoefflinger, Bernd ; Schumacher, Klaus ; Sibbert, Hans
Author_Institution :
Universit¿¿t Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Dortmund, West Germany
fDate :
3/1/1979 12:00:00 AM
Abstract :
An m.o.s. operational amplifier suitable for large-scale integration using n-channel enhancementdepletion technology is reported. It has a large gain of 94 dB, a unity-gain bandwidth of 1 MHz with a small power dissipation of 2.4 mW and it occupies only 0.2 mm2. These miniaturised amplifiers require computeraided design, and the capabilities of the nonlinear d.o.m.o.s. model and computer program are demonstrated. Simple equations for exploratory design and comparison with designs using weak-inversion, complementary or bipolar transistors are also discussed.
Keywords :
circuit CAD; field effect integrated circuits; large scale integration; linear integrated circuits; operational amplifiers; Dortmund MOS amplifier; MOS LSI operational amplifier; bipolar transistor; computer aided design; n-channel enhancement depletion technology; weak inversion transistors;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0010