Title :
Experimental examination of an InAs/GaAs(Sb)/AlAsSb quantum dot approach to the intermediate band solar cell
Author :
Bittner, Zachary S. ; Laghumavarapu, Ramesh B. ; Hellstroem, Staffan ; Huffaker, Diana ; Baolai Liang ; Hubbard, Seth M.
Author_Institution :
Rochester Inst. of Technol., Rochester, NY, USA
Abstract :
In this study work towards an InAs/AlAs0.56Sb0.44 quantum dot (QD) prototype intermediate band solar cell(IBSC) grown on InP is presented. InAs QDs are suspended in an AlAs0.56Sb0.44/GaAs matrix in the unintentionally doped (uid) region of an In0.52Al0.48As solar cell are compared to a bulk In0.52Al0.48As solar cell. While addition of the InAs/AlAsSb matrix results in a drastic drop in AM1.5G performance, electroluminescence shows a peak shift from 855nm to 1623nm and spectral responsivity shows a similar absorption edge shift. A proposed design improvement uses an AlAs0.56Sb0.44 emitter to remove the injection barrier created by the use of AlAs0.56Sb0.44 in the uid-region.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; solar cells; AM1.5G performance; IBSC; InAs-GaAsSb-AlAsSb; InP; QD prototype; absorption edge shift; electroluminescence; intermediate band solar cell; quantum dot approach; uid-region; unintentionally doped region; Absorption; Electroluminescence; Photonic band gap; Photovoltaic cells; Substrates; Thyristors;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924892
