DocumentCode :
1213911
Title :
Effects of minority-carrier storage at the interface states on the fill factor of m.i.s. solar cells
Author :
Nielsen, Otto M.
Volume :
3
Issue :
2
fYear :
1979
fDate :
3/1/1979 12:00:00 AM
Firstpage :
51
Lastpage :
55
Abstract :
Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si M.I.S. solar cells. The results obtained show that the voltage across the cells taken at the maximum powerpoint is typically 50 mV smaller when the cells are illuminated compared to the voltage at the same point in darkness. This is explained as an increase in the recombination current and as an increased concentration of minority carriers at the interface states of about 1012cm¿2when going from dark to illuminated conditions. The result is that the fill factor obtained from the illuminated characteristic is about 9% smaller than if the fill factor is calculated from the dark characteristics.
Keywords :
interface electron states; metal-insulator-semiconductor devices; minority carriers; solar cells; Al-SiO2-Si; IV characteristics; MIS solar cells; fill factor; interface states;
fLanguage :
English
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
Publisher :
iet
ISSN :
0308-6968
Type :
jour
DOI :
10.1049/ij-ssed:19790012
Filename :
4807626
Link To Document :
بازگشت