Title :
Influence of interface states on the charge injection in m.n.o.s. memory devices
Author :
Popova, L.I. ; Vitanov, P.K. ; Antov, B.Z.
Author_Institution :
Institute of Microelectronics, Sofia, Bulgaria
fDate :
5/1/1979 12:00:00 AM
Abstract :
Switching characteristics and charge centroids of m.n.o.s. memory devices with different interface state densities were studied at 25¿¿C and at low temperatures. Experimental evidence, showing that interface states with high density affect the charging process in m.n.o.s. memory devices, is presented.
Keywords :
interface electron states; metal-insulator-semiconductor devices; semiconductor storage devices; MNOS; charge injection; interface states; memory devices; metal nitride oxide semiconductor; switching characteristics;
Journal_Title :
Solid-State and Electron Devices, IEE Journal on
DOI :
10.1049/ij-ssed.1979.0014
