DocumentCode
1213938
Title
Monolithic GaAs multivibrator for operation at temperatures up to 300 degrees C
Author
Schweeger, G. ; Singh, Jitesh K. ; Fricke, Kyle ; Klingelhofer, C. ; Hartnagel, H.L.
Author_Institution
Tech. Hochschule Darmstadt, West Germany
Volume
25
Issue
20
fYear
1989
Firstpage
1385
Lastpage
1386
Abstract
A technology for temperature-stable GaAs integrated circuits is described, using as an example a monolithic multivibrator. The performance of this multivibrator and the different modes of operation are presented. It is shown that conventional models for integrated circuits fail at temperatures higher than 200 degrees C and that only careful design may prevent failures due to electric overstress, which is more probable at high temperatures.
Keywords
III-V semiconductors; gallium arsenide; monolithic integrated circuits; multivibrators; GaAs; electric overstress; failures; high temperatures; models; multivibrator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890927
Filename
34013
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