Title :
Crosstalk suppression in mixed-mode ICs by the π technology and the future with an SOC integration platform: particle-beam stand (PBS)
Author :
Liao, Chungpin ; Liu, Mao-Neng ; Juang, Kai-Chuang
Author_Institution :
Adv. Res. & Bus. Lab., Taichung, Taiwan
fDate :
3/1/2003 12:00:00 AM
Abstract :
A π technology (particle-enhanced isolation, PEI) is proposed to employ penetrating proton beams on the already manufactured mixed-mode (analog-digital) IC wafers (prior to packaging) for the suppression of undesirable substrate coupling. Results indicated that an improvement of 25-30 dB could be achieved by applying a relatively low-fluence proton bombardment on the isolation-intended region in a metal pads pattern. Hall measurements of the irradiated spots were conducted and the associated physics are elaborated on. Issues relevant to the commercial-scale implementation of this technology are also pointed out and discussed. Finally, a π-technology-based post-very large scale integration (VLSI) concept: the "particle-beam stand" (PBS) is promoted, which, especially with its design rules pushed to the front end, can potentially serve as the general system-on-a-chip (SOC) integration platform and end most mixed-mode and RF SOC development difficulties.
Keywords :
Hall effect; LIGA; crosstalk; deep levels; integrated circuit design; isolation technology; mixed analogue-digital integrated circuits; proton effects; radiofrequency integrated circuits; system-on-chip; π technology; 15 to 30 MeV; Hall measurements; LIGA; RF SOC; SOC integration platform; commercial-scale implementation; crosstalk suppression; deep-level defect; design rules; isolation-intended region; low-fluence proton bombardment; metal pads pattern; mixed-mode ICs; particle-beam stand; particle-enhanced isolation; penetrating proton beams; post-VLSI concept; substrate coupling suppression; Analog integrated circuits; Analog-digital conversion; Analog-digital integrated circuits; Crosstalk; Integrated circuit packaging; Isolation technology; Manufacturing; Optical coupling; Particle beams; System-on-a-chip;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.810476