• DocumentCode
    1214055
  • Title

    551 nm diode-laser-pumped upconversion laser

  • Author

    Tong, Fei ; Risk, William P. ; Macfarlane, R.M. ; Lenth, W.

  • Author_Institution
    IBM Res. Div., Almaden Res. Center, San Jose, CA, USA
  • Volume
    25
  • Issue
    20
  • fYear
    1989
  • Firstpage
    1389
  • Lastpage
    1391
  • Abstract
    Green laser emission at 551 nm was achieved in LiYF4:Er3+ by upconversion pumping with a near-infra-red diode laser at low temperature. Using a 2 mm-long monolithic laser crystal the lasing threshold was reached with 34 mW of absorbed power from an AlGaAs diode-laser array.
  • Keywords
    erbium; laser transitions; lithium compounds; optical frequency conversion; optical pumping; solid lasers; yttrium compounds; 551 nm; AlGaAs; LiYF 4:Er 3+; absorbed power; low temperature; monolithic laser crystal; near-infra-red diode laser; upconversion pumping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890930
  • Filename
    34016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1214055