Title :
551 nm diode-laser-pumped upconversion laser
Author :
Tong, Fei ; Risk, William P. ; Macfarlane, R.M. ; Lenth, W.
Author_Institution :
IBM Res. Div., Almaden Res. Center, San Jose, CA, USA
Abstract :
Green laser emission at 551 nm was achieved in LiYF4:Er3+ by upconversion pumping with a near-infra-red diode laser at low temperature. Using a 2 mm-long monolithic laser crystal the lasing threshold was reached with 34 mW of absorbed power from an AlGaAs diode-laser array.
Keywords :
erbium; laser transitions; lithium compounds; optical frequency conversion; optical pumping; solid lasers; yttrium compounds; 551 nm; AlGaAs; LiYF 4:Er 3+; absorbed power; low temperature; monolithic laser crystal; near-infra-red diode laser; upconversion pumping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890930
