Current gain variability in normal and I2L bipolar transistors

Author

Bhattacharyya, A.B. ; Jindal, Subodh ; Subramanian, Shankar

Author_Institution

Indian Institute of Technology, Centre for Applied Research in Electronics, Department of Electrical Engineering, New Delhi, India

Volume

3

Issue

4

fYear

1979

fDate

7/1/1979 12:00:00 AM

Firstpage

107

Lastpage

116

Abstract

This paper studies the nature and degree of variation in current gain caused by perturbations in processing and material parameters in normal and I2L (inverse) transistors, formed by the double-diffusion process. The influence of predeposition and drive-in cycle, surface recombination velocity, emitter contact area and epitaxial-layer concentration has been estimated. It is shown that it is possible to recover a change in gain caused by perturbation in a particular parameter. Current-gain variability is found to be a characteristic of device design. It is desirable to optimise the design, both from the viewpoint of the specified gain and its expected variability.

Keywords

bipolar transistors; semiconductor device models; I2L inverse bipolar transistors; current gain variability; device design influence; double diffusion process; emitter contact area; epitaxial layer concentration; material parameter variations effects; normal bipolar transistors; predeposition and drive in cycle; processing parameters effects; surface recombination velocity;

fLanguage

English

Journal_Title

Solid-State and Electron Devices, IEE Journal on

Publisher

iet

ISSN

0308-6968

Type

jour

DOI

10.1049/ij-ssed:19790024

Filename

4807640