DocumentCode :
1214113
Title :
Switching characteristics of phase modulators
Author :
Sch¿¿nemann, Klaus ; Sporleder, Frank ; Szabo, Laszlo
Author_Institution :
Technischen Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Volume :
3
Issue :
5
fYear :
1979
fDate :
9/1/1979 12:00:00 AM
Firstpage :
197
Lastpage :
204
Abstract :
The influence of the p-i-n-diode switching transients on the performance of digital phase modulators is studied. To this end two models are introduced: a diode model which allows one to calculate the transient impedances, and a black-box model of a phase modulator which can be incorporated in network analysis programs in order to simulate system performance. Based on these models, guidlines are given for an optimum choice of various design parameters as for example the i-layer width of the p-i-n-diode, the switching-current ratio, the switching-current waveforms and the modulator bandwidth.
Keywords :
modulators; phase modulation; semiconductor device models; semiconductor diodes; semiconductor switches; digital phase modulators; i-layer width; modulator bandwidth; optimisation; p-i-n diode model; p-i-n diode switching transients; switching current ratio; switching current waveforms;
fLanguage :
English
Journal_Title :
Microwaves, Optics and Acoustics, IEE Journal on
Publisher :
iet
ISSN :
0308-6976
Type :
jour
DOI :
10.1049/ij-moa:19790045
Filename :
4807647
Link To Document :
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