Title :
Preventing instability damages in multiple finger heterojunction bipolar transistors by tunnel diode emitter design
Author :
Shamir, N. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
3/1/2003 12:00:00 AM
Abstract :
We present a tunnel diode emitter structure capable of preventing instability damage in multiple finger high power heterojunction bipolar transistors. An Esaki diode pair vertically integrated to the wide bandgap emitter self-limits the finger current and prevents current runaway. We describe the principle of operation and demonstrate the electrical characteristics of a single finger in the proposed device.
Keywords :
current distribution; heterojunction bipolar transistors; power bipolar transistors; semiconductor device reliability; thermal stability; tunnel diodes; Gummel plot; InP-GaInAs; NPN InP/GaInAs HBT; common emitter measurements; current runaway prevention; electrical characteristics; finger current; high power multiple finger bipolar transistors; instability damage; multiple finger heterojunction bipolar transistors; thermal instability; tunnel diode emitter design; uniform current distribution; vertically integrated Esaki diode pair; wide bandgap emitter; Current density; Degradation; Diodes; Fingers; Heterojunction bipolar transistors; Impact ionization; Indium phosphide; Leakage current; Temperature; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.811389
