Title :
DC characteristics of pnp AlGaAs/GaAs narrow-base heterojunction bipolar transistors
Author :
Liou, L.L. ; Ezis, A. ; Ikossi-Anastasiou, K. ; Evans, K.R. ; Stutz, C.E. ; Jones, R.L.
Author_Institution :
Universal Energy Syst. Inc., Dayton, OH, USA
Abstract :
AlGaAs/GaAs pnp narrow-base heterojunction bipolar transistors (HBTs) exhibiting low collector cut-in voltages (0.25-0.3 V) and operation at collector current densities of >1.5*104 A/cm2 have been fabricated. Devices with a base width of 50 AA and nominal base doping densities of 3, 6, and 9*1018 cm-3 exhibit maximum common-emitter DC current gains of 105, 21 and 5, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; 50 AA; AlGaAs-GaAs; DC characteristics; HBTs; III-V semiconductors; MBE; base doping densities; collector current densities; common-emitter DC current gains; fabrication; heterojunction bipolar transistors; low collector cut-in voltages; narrow-base; p-n-p structure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890934
