Title :
830 nm high power low-noise self-aligned AlGaAs/GaAs double-quantum-well lasers
Author :
Ishikawa, S. ; Nido, M. ; Endo, Kazuhiro ; KOMAZAKI, L. ; Fukagai, K. ; Yuasa, T.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
By doubling the quantum well (QW), high-power and low-threshold self-aligned QW lasers have been obtained with high reliability and good characteristic temperature. The lasers have also shown lower optical feedback noise than single-quantum-well lasers. For double-quantum-well lasers, stable operations for over 1400 h has been measured for 50 degrees C, 50 mW, CW operating conditions.
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; laser transitions; semiconductor junction lasers; 1400 hr; 50 degC; 50 mW; 830 nm; AlGaAs-GaAs; CW operating conditions; III-V semiconductors; double-quantum-well lasers; high power; high reliability; low-noise; low-threshold; optical feedback noise; self-aligned QW lasers; semiconductor lasers; stable operations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890935
