DocumentCode :
121435
Title :
Application of InGaP/GaAs/InGaAs triple junction solar cells to space use and concentrator photovoltaic
Author :
Takamoto, Tatsuya ; Washio, Hidetoshi ; Juso, Hiroyuki
Author_Institution :
SHARP Corp., Yamatokoriyama, Japan
fYear :
2014
fDate :
8-13 June 2014
Abstract :
InGaP(1.88eV)/GaAs(1.43eV)/InGaAs(0.98eV) triple junction solar cells with high efficiencies of 37.9% (AM1.5G) and 44.4% (AM1.5D, 302-suns) have been attained by inverted lattice-mismatch fabrication procedure. Cell structure was optimized to improve radiation resistance for space use. Lightweight space solar sheet has been developed by using the film type triple junction cells. Good performance of the solar sheet has been confirmed in reliability test and demonstrated in space flight test. Concentrator module using the triple junction cells have shown over 10% higher efficiency than the present type InGaP/(In)GaAs/Ge triple junction cells. High performance of the concentrator module has been demonstrated in outdoor field testing.
Keywords :
gallium compounds; indium compounds; solar cells; solar power satellites; cell structure; concentrator photovoltaic; film type triple junction cells; inverted lattice-mismatch fabrication procedure; lightweight space solar sheet; radiation resistance; triple junction solar cells; Gallium arsenide; Indium gallium arsenide; Reliability; Resistance; Space vehicles; Substrates; Testing; concentrator; lattice-mismatch; space; triple junction cell;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6924936
Filename :
6924936
Link To Document :
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