DocumentCode
121435
Title
Application of InGaP/GaAs/InGaAs triple junction solar cells to space use and concentrator photovoltaic
Author
Takamoto, Tatsuya ; Washio, Hidetoshi ; Juso, Hiroyuki
Author_Institution
SHARP Corp., Yamatokoriyama, Japan
fYear
2014
fDate
8-13 June 2014
Abstract
InGaP(1.88eV)/GaAs(1.43eV)/InGaAs(0.98eV) triple junction solar cells with high efficiencies of 37.9% (AM1.5G) and 44.4% (AM1.5D, 302-suns) have been attained by inverted lattice-mismatch fabrication procedure. Cell structure was optimized to improve radiation resistance for space use. Lightweight space solar sheet has been developed by using the film type triple junction cells. Good performance of the solar sheet has been confirmed in reliability test and demonstrated in space flight test. Concentrator module using the triple junction cells have shown over 10% higher efficiency than the present type InGaP/(In)GaAs/Ge triple junction cells. High performance of the concentrator module has been demonstrated in outdoor field testing.
Keywords
gallium compounds; indium compounds; solar cells; solar power satellites; cell structure; concentrator photovoltaic; film type triple junction cells; inverted lattice-mismatch fabrication procedure; lightweight space solar sheet; radiation resistance; triple junction solar cells; Gallium arsenide; Indium gallium arsenide; Reliability; Resistance; Space vehicles; Substrates; Testing; concentrator; lattice-mismatch; space; triple junction cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6924936
Filename
6924936
Link To Document