DocumentCode :
1214361
Title :
Investigation into effects of device variability on CMOS layout motifs
Author :
Paluchowski, S.H. ; Cheng, B. ; Roy, S. ; Asenov, A. ; Cumming, D.R.S.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., Glasgow
Volume :
44
Issue :
10
fYear :
2008
Firstpage :
626
Lastpage :
627
Abstract :
Sub-circuit motifs are proposed as a methodology for simulating the performance of sub-45 nm circuits exhibiting atomistic device fluctuations. Motifs allow the reduction of the problem space and create a standard motif library as a step in the design hierarchy for logic circuits. Device variability information from 3D simulation results is used that is incorporated into families of BSIM4 models. It is demonstrated how a thorough understanding of circuit behaviour can be obtained and the impact on current drive is illustrated by examining the effect of additional parasitic resistances.
Keywords :
CMOS logic circuits; circuit simulation; integrated circuit layout; integrated circuit modelling; logic design; 3D circuit simulation; BSIM4 models; CMOS layout motifs; atomistic device fluctuations; current drive; device variability information; logic circuit design hierarchy; parasitic resistances; size 45 nm;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20080447
Filename :
4515920
Link To Document :
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