• DocumentCode
    1214361
  • Title

    Investigation into effects of device variability on CMOS layout motifs

  • Author

    Paluchowski, S.H. ; Cheng, B. ; Roy, S. ; Asenov, A. ; Cumming, D.R.S.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., Glasgow
  • Volume
    44
  • Issue
    10
  • fYear
    2008
  • Firstpage
    626
  • Lastpage
    627
  • Abstract
    Sub-circuit motifs are proposed as a methodology for simulating the performance of sub-45 nm circuits exhibiting atomistic device fluctuations. Motifs allow the reduction of the problem space and create a standard motif library as a step in the design hierarchy for logic circuits. Device variability information from 3D simulation results is used that is incorporated into families of BSIM4 models. It is demonstrated how a thorough understanding of circuit behaviour can be obtained and the impact on current drive is illustrated by examining the effect of additional parasitic resistances.
  • Keywords
    CMOS logic circuits; circuit simulation; integrated circuit layout; integrated circuit modelling; logic design; 3D circuit simulation; BSIM4 models; CMOS layout motifs; atomistic device fluctuations; current drive; device variability information; logic circuit design hierarchy; parasitic resistances; size 45 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080447
  • Filename
    4515920