Title :
Low-DC power 2-18 GHz monolithic matrix amplifier
Author :
D´Agostino, S. ; D´Inzeo, G. ; Gatti, G. ; Marietti, P.
Author_Institution :
Dept. of Electron. Eng., Rome Univ., Italy
Abstract :
The authors present a (2*5) matrix amplifier with a DC power consumption as low as 200 mW with 13 dBm of RF output power (@1 dB compression point) achieving 7 dB small-signal gain (residual ripple 0.3 dB) and input and output return losses always better than -14 dB. Designed using the LN05 monolithic process of Thomson Composants Microondes (TCM), the amplifier employs ten MESFETs of 160 mu m gate width and submicron (0.5 mu m) gate length, for a total chip area of 2.5*3.5 mm/sup 2/. Broadband performance and very low power consumption make this amplifier very well suited for end-volume realisation of monolithic multiple-stage front-ends in integrated high bit-rate optical receivers.<>
Keywords :
MESFET integrated circuits; MMIC; distributed amplifiers; microwave amplifiers; optical receivers; -14 dB; 0.5 micron; 160 micron; 2 to 18 GHz; 200 mW; 7 dB; DC power consumption; LN05 monolithic process; MESFET; RF output power; SHF; Thomson Composants Microondes; UHF; broadband performance; chip area; distributed amplifier; gate width; input return loss; integrated high bit-rate optical receivers; low-DC power amplifier; matrix amplifier; monolithic matrix amplifier; monolithic multiple-stage front-ends; output return loss; residual ripple; small-signal gain; submicron gate length; Distributed amplifiers; MESFET integrated circuits; MMICs; Microwave amplifiers; Optical receivers;
Journal_Title :
Microwaves, Antennas and Propagation, IEE Proceedings
DOI :
10.1049/ip-map:19941405
