Title :
Raman investigation of epitaxial Cu2ZnSnSe4 layers from annealed Sn/Cu/ZnSe(001) precursors on GaAs(001)
Author :
Krammer, Christoph ; Lang, Michael ; Sachs, Joachim ; Pfaffmann, Lukas ; Chao Gao ; Gerthsen, Dagmar ; Kalt, Heinz ; Powalla, Michael ; Hetterich, Michael
Author_Institution :
Inst. of Appl. Phys., Inst. of Technol. (KIT), Karlsruhe, Germany
Abstract :
We investigate the crystal unit cell orientation of epitaxial Cu2ZnSnSe4 films on GaAs(001) using polarized Raman spectroscopy. An epitaxial ZnSe(001) layer is grown in a molecular-beam epitaxy system followed by the deposition of Cu and Sn and annealing in Se atmosphere. This method results in an epitaxially ordered Cu2ZnSnSe4 film on GaAs as proven by Electron Backscatter Diffraction (EBSD) measurements and X-ray diffraction. Polarization-dependent Raman spectra of the layers not only exhibit the typical kesterite main modes but also intensity oscillations when the sample is rotated around the optical axis. These oscillations yield information about the orientation of the kesterite crystal unit cell.
Keywords :
Raman spectra; X-ray diffraction; annealing; copper compounds; electron backscattering; electron diffraction; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; zinc compounds; Cu2ZnSnSe4; EBSD; GaAs; GaAs(001) surface; X-ray diffraction; annealing; crystal unit cell orientation; electron backscatter diffraction; epitaxial layer; epitaxially ordered films; kesterite crystal unit cell; kesterite main modes; molecular-beam epitaxy system; optical axis; oscillation yield information; polarization-dependent Raman spectra; polarized Raman spectroscopy; Crystals; Epitaxial growth; Oscillators; Raman scattering; Tensile stress; Tin; Cu2ZnSnSe4; Epitaxy; Raman spectroscopy;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6924942
