• DocumentCode
    1214412
  • Title

    GaAs/AlGaAs double heterostructure laser monolithically integrated with passive waveguide using focused ion beam etching

  • Author

    Remiens, D. ; Menigaux, L. ; Ben Assayag, G. ; Gierak, J. ; Sudraud, P.

  • Author_Institution
    CNET, Lab. de Bagneux, France
  • Volume
    25
  • Issue
    20
  • fYear
    1989
  • Firstpage
    1400
  • Lastpage
    1402
  • Abstract
    The authors report the fabrication and operation of a double heterostructure (DH) laser butt-coupled to an optical waveguide. A focused ion beam (FIB) is used to fabricate a Perot-Fabry resonator in the monolithic device. Most of the devices have threshold currents between 90 and 100 mA and emit 7 mW from the passive waveguide.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; integrated optoelectronics; ion beam applications; optical waveguides; semiconductor junction lasers; sputter etching; 7 mW; 90 to 100 mA; DH semiconductor laser; FIB; GaAs-AlGaAs; III-V semiconductors; OEIC; Perot-Fabry resonator; butt-coupled; double heterostructure laser; fabrication; focused ion beam etching; integrated optics; integrated optoelectronics; monolithic device; optical waveguide; passive waveguide; threshold currents;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890937
  • Filename
    34023
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1214412