• DocumentCode
    1214414
  • Title

    Pulsed characterisation and nonlinear modelling of four terminal LDMOS for smart power amplifiers

  • Author

    Labrousse, N. ; Bouny, J.J. ; Campovecchio, M. ; Teyssier, J.P.

  • Author_Institution
    Freescale Semicond., Toulouse
  • Volume
    44
  • Issue
    10
  • fYear
    2008
  • Firstpage
    636
  • Lastpage
    637
  • Abstract
    A novel transistor with four terminals (4T) directly based on the silicon LDMOS process is presented. Pulsed I-V and S characterisations are proposed to provide a straightforward method for determining the nonlinear model (NLM) of such a 4T LDMOS. On wafer measurements of devices are done on a specific three-port measurement setup. The agreement between NLM and measured performance is reported.
  • Keywords
    MOSFET; power amplifiers; four terminal LDMOS; nonlinear modelling; pulsed characterisation; smart power amplifiers; three-port measurement setup;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20080411
  • Filename
    4515926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1214414