Title :
Low-threshold distributed reflector laser consisting of wide and narrow wirelike active regions
Author :
Ohira, K. ; Murayama, T. ; Yagi, H. ; Tamura, S. ; Arai, S.
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol., Japan
Abstract :
We demonstrate a low-threshold distributed reflector laser, consisting of a distributed feedback section with wirelike active regions and a passive distributed Bragg reflector section with narrower ones, by utilizing the lateral quantum confinement effect. A threshold current under the room-temperature continuous-wave condition as low as 3.2 mA, which corresponds to a threshold current density of 290 A/cm2, was obtained with the stripe width of 4.3 μm and the active region length of 260 μm. The differential quantum efficiency of 19% from the front facet, a high output ratio of 11 from the front facet to the rear facet, and a submode suppression ratio of 47 dB at a bias current 3.75 times the threshold were also achieved.
Keywords :
distributed Bragg reflector lasers; distributed feedback lasers; laser modes; quantum confined Stark effect; quantum well lasers; semiconductor quantum wires; 20 degC; 260 mum; 3.2 mA; 4.3 mum; continuous-wave condition; differential quantum efficiency; distributed feedback section; distributed reflector laser; high output ratio; lateral quantum confinement effect; low-threshold laser; narrow active regions; passive distributed Bragg reflector; room-temperature condition; single mode operation; submode suppression ratio; threshold current density; wide active regions; wirelike active regions; Distributed Bragg reflectors; Distributed feedback devices; Laser feedback; Laser modes; Optical transmitters; Potential well; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Distributed reflector (DR) laser; integration; lateral quantum confinement; low threshold; single mode;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.840068