Title :
Radiation-induced interface state generation in MOS devices with reoxidised nitrided SiO2 gate dielectrics
Author :
Lo, G.Q. ; Ting, Wei-Yuan ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
The radiation-induced interface state generation Delta Dit in MOS devices with reoxidised nitrided gate oxides has been studied. The reoxidised nitrided oxides were fabricated by rapid thermal reoxidation (RTO) of rapidly thermal nitrided (RTN) SiO2. The devices were irradiated by exposure to X-rays at doses of 0.5-5.0 Mrad (Si). It is found that the RTO process improves the radiation hardness of RTN oxides in terms of interface state generation. The enhanced interface ´hardness´ of reoxidised nitrided oxides is attributed to the strainless interfacial oxide regrowth or reduction of hydrogen concentration during RTO of RTN oxides.
Keywords :
X-ray effects; interface electron states; metal-insulator-semiconductor devices; oxidation; radiation hardening (electronics); silicon; silicon compounds; 5*10 5 to 5*10 6 rad; H concentration reduction; MOS devices; RTO; Si-SiO 2; Si xN yO z-Si; SiO 2 gate dielectrics; X-rays; radiation hardness; radiation-induced interface state generation; rapid thermal reoxidation; rapidly thermal nitrided SiO 2; reoxidised nitrided gate oxides; strainless interfacial oxide regrowth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890939
