Title :
Single photon avalanche photodetector with integrated quenching fabricated in TSMC 0.18 μm 1.8 V CMOS process
Author :
Marwick, M.A. ; Andreou, A.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD
Abstract :
The design and testing of a single photon avalanche detector with integrated quenching circuit fabricated in the TSMC 0.18 mum CMOS technology are reported. A 78 mum device exhibits an average dark count rate of 100 counts/s without cooling. Photon detection probability of approximately 14% is measured at 670 nm.
Keywords :
CMOS integrated circuits; circuit testing; integrated circuit design; photodetectors; CMOS process; integrated quenching fabrication; single photon avalanche photodetector; size 0.18 mum; voltage 1.8 V; wavelength 670 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080673
