Title :
Study on high-temperature performances of 1.3-μm InGaAsP-InP strained multiquantum-well buried-heterostructure lasers
Author :
Jinyan Jin ; Jing Shi ; Decheng Tian
Author_Institution :
Dept. of Phys., Wuhan Univ., Hubei, China
Abstract :
Stripe-width and cavity length dependencies of high-temperature performances of 1.3-μm InGaAsP-InP well-designed buried-heterostructure strained multiquantum-well (MQW) lasers were investigated. The threshold currents as low as 4.5/10.5 mA and slope efficiencies as high as 0.48/0.42 mW/mA at 25/spl deg/C/85/spl deg/C were obtained in the MQW lasers with 1.5-μm width, 250-μm length, and 0.3/0.85 facet reflectivity. With temperature increasing from 25/spl deg/C to 85/spl deg/C, the MQW lasers exhibited lower output power degradation, the minimum value was 1.78 dB at an operation current of 45 mA. The MQW lasers were suitable for application in optical access networks.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; reflectivity; 1.3 mum; 1.5 mum; 10.5 mA; 25 to 85 degC; 250 mum; 4.5 mA; 45 mA; InGaAsP-InP; InGaAsP-InP laser; buried-heterostructure lasers; cavity length dependence; facet reflectivity; high-temperature performances; low output power degradation; multiquantum-well lasers; optical access networks; strained lasers; stripe-width dependence; Degradation; Optical losses; Optical waveguides; Physics; Power generation; Power lasers; Quantum well devices; Semiconductor lasers; Temperature; Threshold current; Cavity length; high-temperature performance; multiquantum-well (MQW); output power degradation; semiconductor lasers; stripe width;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.840815
